? 0.15) is epitaxially developed on the SOI substrate. A thinner layer of Si is grown on this SiGe layer, after which you can the construction is cycled through oxidizing and annealing phases. As a result of preferential oxidation of Si over Ge [sixty eight], the original Si1–Nghiên c?u c?a FDA ??a ra k?t lu?n r?ng germani, khi s? ??ng nh? là c